Aeronautics and Space Transportation Technology
Characterization of Carbon Nanotubes under Deformation
Richard L. Jaffe, Liu Yang, Jie Han, M. P. Anantram
Ongoing nanotechnology research at Ames Research Center is aimed at developing revolutionary small-scale electronic devices and sensors to meet the requirements of future NASA missions. Carbon Nanotubes (CNT) are hollow cylinders of graphitic carbon atoms; the cylinders have diameters of ~0.001 microns and lengths of up to several microns (more than 100 times smaller than the components of today's microprocessors). Depending on the orientation of the hexagonal carbon rings in the tube surface, some CNTs have metallic properties (that is, the band gap is zero) and others are semiconductors (that is, the band gap is finite, but less than 1 electron volt).

Because of their varying electronic properties and very small size, CNT components are expected to have an important role in the development of future electronic devices. In addition, CNTs have extraordinarily large tensile modulus and tensile strength, which places them among the strongest materials known. These attributes make them promising candidates for reinforcing fibers and for microelectronic- mechanical sensors (MEMS). Single-CNT transistors (shown schematically in figure 1) have been fabricated and tested under ideal laboratory conditions, but it is not known whether they will function under typical operating conditions of integrated circuits. Previously, modeling studies were carried out to characterize idealized CNT electronic devices. This year, research focused on characterizing electronic devices and sensors under realistic operating conditions where the CNTs are bent, flattened, and twisted by their interactions with substrates, metal contacts, and other devices.

Electronic properties of stretched, compressed, and bent CNTs have been studied, using a full-valence electron tight-binding model to calculate the electronic density of states (DOS), bandgap and conductance. Selected results for stretched and compressed nanotubes are illustrated in figure 2.

Similar results have been found for other deformations. We find that some metallic-like nanotubes (labeled 5,5) remain conducting even when subjected to large compressive or tensile strain, as evidenced by their bandgaps remaining zero. However, other conducting tubes (labeled 9,0) develop sizeable band gaps under these conditions. Finally the band gaps of semiconducting tubes (8,0 and 10,0) are found to be very sensitive to the applied strain. Metallic nanotubes, such as the (5,5), retain their electronic properties even when subjected to large deformations; as a result, they are promising candidates for use in CNT-based electronic devices. On the other hand, other conducting tubes, such as the (9,0), are good candidates for MEMS devices, because their conductivity decreases markedly with increasing tensile strain. Optimal performance of CNT devices and sensors will be achieved by selecting the correct type of nanotube for the particular application.

Point of Contact: R. Jaffe
(650) 604-6458
rjaffe@mail.arc.nasa.gov

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  • Fig. 1. Schematic diagram of a single carbon nanotube transistor. The source and drain potentials are applied at the platinum contacts, and the gate voltage from the underlying silicon controls the operation of the device.


    Fig. 2. Variation of computed band gap as a function of tensile strain for several different carbon nanotubes; negative strain represents compression, and positive strain represents tension.

    Research & Technology 1999
    NASA Ames Research Center


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